| PART |
Description |
Maker |
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398
SMALL-SIGNAL TRANSISTOR
|
Isahaya Electronics Corporation
|
| 2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE.
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Planar type
|
ISAHAYA[Isahaya Electronics Corporation]
N.A.
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.
|
Isahaya Electronics Corporation
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| IMZ2AL-AL6-R IMZ2AG-AG6-R IMZ2A-AG6-R IMZ2A-AL6-R |
150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-6
POWER MANAGEMENT DUAL TRANSISTOR)
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side);
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 1A条一（c）|
|
TE Connectivity, Ltd.
Aeroflex, Inc.
|
| 16-216/T3D-AQ1R2TY/3T T3D-AQ1R2TY13 |
The 16-216 SMD LED is much smaller than lead frame type components
|
Everlight Electronics Co., Ltd
|
| STW8Q14BE |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-20 |
B5B-433-20 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
